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Formation and properties of PZT-PbO thin heterophase films
The structural, electrophysical and photogalvanic properties of thin Pb(Ti 0,47 Zr 0,53 )O3+xPbO films obtained by the sol-gel process were investigated as a function of PbO concentration. Samples without lead excess showed dependence of the photocurrent direction from the preliminary direction of p...
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Published in: | Ferroelectrics 2016-05, Vol.496 (1), p.170-176 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The structural, electrophysical and photogalvanic properties of thin Pb(Ti
0,47
Zr
0,53
)O3+xPbO films obtained by the sol-gel process were investigated as a function of PbO concentration. Samples without lead excess showed dependence of the photocurrent direction from the preliminary direction of polarization in the absence of photoresponse in the unpolarized state. The PZT films with 5-15 mol. % lead excess are characterized by unipolar short-circuit photocurrent. Increasing the concentration of PbO in the solution up to 30 mol. % leads to extinction throughout the thickness of the columnar structure film crystallites and reduction of short-circuit photocurrent amplitude. |
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ISSN: | 0015-0193 1563-5112 |
DOI: | 10.1080/00150193.2016.1157453 |