Hybrid Modulation-Doping of Solution-Processed Ultrathin Layers of ZnO Using Molecular Dopants

An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi‐2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathi...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-05, Vol.28 (20), p.3952-3959
Main Authors: Schießl, Stefan P., Faber, Hendrik, Lin, Yen-Hung, Rossbauer, Stephan, Wang, Qingxiao, Zhao, Kui, Amassian, Aram, Zaumseil, Jana, Anthopoulos, Thomas D.
Format: Article
Language:English
Subjects:
Channels
Deposition
Dopants
doping
Formulations
Free electrons
metal oxide semiconductors
modulation doping
molecular doping
organic semiconductors
Tuning
Vices
Zinc oxide
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Summary:An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi‐2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopant molecule to ZnO and vice versa is demonstrated.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201503200