Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature

Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7μm and diameter of 200μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2016-03, Vol.813, p.1-9
Main Authors: Lioliou, G., Meng, X., Ng, J.S., Barnett, A.M.
Format: Article
Language:English
Subjects:
Capacitance
Detectors
Gallium Arsenide
Noise
p-i-n photodiodes
Photocurrent
Photoelectric effect
Photons
Thickness
Visible and near infrared responsivity
X-ray spectroscopy
X-rays
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Summary:Two GaAs mesa p+-i-n+ photodiodes intended for photon counting X-ray spectroscopy, having an i layer thickness of 7μm and diameter of 200μm, have been characterized electrically, for their responsivity at the wavelength range 580 nm to 980 nm and one of them for its performance at detection of soft X-rays, at room temperature. Dark current and capacitance measurements as a function of applied forward and reverse bias are presented. The results show low leakage current densities, in the range of nA/cm2 at the maximum internal electric field (22kV/cm). The unintentional doping concentration of the i layer, calculated from capacitance measurements, was found to be
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2015.12.030