p-Type MoS sub(2) and n-Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

A plasma-induced p-type MoS sub(2) flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-05, Vol.28 (17), p.3391-3398
Main Authors: Xue, Fei, Chen, Libo, Chen, Jian, Liu, Jingbin, Wang, Longfei, Chen, Mengxiao, Pang, Yaokun, Yang, Xiaonian, Gao, Guoyun, Zhai, Junyi, Wang, Zhong Lin
Format: Article
Language:English
Subjects:
Diodes
Flakes
Molybdenum disulfide
Photocurrent
Photoelectric effect
Quantum efficiency
Rectification
Zinc oxide
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Summary:A plasma-induced p-type MoS sub(2) flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201506472