Direct formation of graphene layers on diamond by high-temperature annealing with a Cu catalyst

• Published in: Diamond and related materials 2016-03, Vol.63, p.148-152
• Main Authors: Ueda, K., Aichi, S., Asano, H.
• Format: Article
• Language: English
• Subjects: Annealing; Catalysts; Diamond; Diamonds; Formations; Graphene; High-temperature annealing; Mobility; Monolayers; Raman; Silicon carbide; Two dimensional
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/j.diamond.2015.10.021

The formation of high-quality graphene layers on diamond was achieved based on a high-temperature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950°C for 90min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be ~1013cm−2 and ~670cm2/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC. [Display omitted] •The formation of high-quality graphene layers on diamond was achieved based on a high-temperature annealing method.•Typical features of monolayer graphene were observed in the Raman spectra of layers on diamond.•The sheet hole concentration and mobility values of the layers were estimated to be ~1013 cm−2 and ~670 cm2/Vs.