Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy Barrier

The effect of oxygen high pressurized treatment (OHPT) on the gate-bias thermal stress (BTS) instability of amorphous indium-gallium-zinc-oxide (IGZO) TFTs was investigated. OHPT at 10 atm and 300 °C produces TFTs with better reliability under the positive/negative BTS conditions, which can be attri...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2016-03, Vol.63 (3), p.1054-1058
Main Authors: Song, Ji Hun, Oh, Nuri, Anh, Byung Du, Kim, Hye Dong, Jeong, Jae Kyeong
Format: Article
Language:English
Subjects:
Amorphous indium-gallium-zinc-oxide (a-IGZO)
Annealing
Defects
Degradation
Deterioration
Devices
Dynamics
Instability
interstitial oxygen
Logic gates
Oxygen
oxygen vacancy
Stability
Stress
Temperature measurement
TFT
Thermal stability
Threshold voltage
Vacancies
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Summary:The effect of oxygen high pressurized treatment (OHPT) on the gate-bias thermal stress (BTS) instability of amorphous indium-gallium-zinc-oxide (IGZO) TFTs was investigated. OHPT at 10 atm and 300 °C produces TFTs with better reliability under the positive/negative BTS conditions, which can be attributed to the reduction in the oxygen vacancy defect. However, OHPT at a higher pressure (15 atm) deteriorated the BTS-induced stability of the IGZO TFTs. The rationale for this strong OHPT dependence on the BTS instability of IGZO TFTs was discussed based on the single-frame oxygen-related defect model.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2511883