Effect of annealing conditions on the structural, electrical and optical properties of Li-doped NiO thin films

Transparent conductive oxide (TCO) p-type Li-doped NiO thin films were deposited on the (0001) sapphire substrates by magnetron sputtering technique with a high purity NiO:Li 2 O ceramic target. We systematically investigated the structural, electrical and optical properties of NiO:Li thin films ann...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2016-06, Vol.27 (6), p.6408-6412
Main Authors: Chu, Xianwei, Leng, Jiyan, Liu, Jia, Shi, Zhifeng, Li, Wancheng, Zhuang, Shiwei, Yang, Hang, Du, Guotong, Yin, Jingzhi
Format: Article
Language:English
Subjects:
Annealing
Characterization and Evaluation of Materials
Chemistry and Materials Science
Magnetron sputtering
Materials Science
Optical and Electronic Materials
Optical properties
Oxygen
Sapphire
Thin films
Ultraviolet
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Summary:Transparent conductive oxide (TCO) p-type Li-doped NiO thin films were deposited on the (0001) sapphire substrates by magnetron sputtering technique with a high purity NiO:Li 2 O ceramic target. We systematically investigated the structural, electrical and optical properties of NiO:Li thin films annealed in different conditions. We found that annealing in different conditions greatly affects the physical properties of NiO:Li thin films. Compared with the NiO:Li thin film annealed in oxygen, the hole concentration of NiO:Li thin film annealed in nitrogen at the same processing temperature is obviously lower. Annealed in oxygen at 500 °C, NiO:Li films show excellent crystal quality with single (111) orientation, high hole concentrations. When the annealing temperature increased, the transmittance of NiO:Li thin films become better for wavelength range from ultraviolet (UV) to visible with a significant absorption edge near 350 nm.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-016-4578-2