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X-ray photoelectron spectroscopy study of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond

In this study, investigation of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond (O-/F-diamond) film has been carried out. Both of the O-/F-diamond surfaces have been formed on different areas of one (100) diamond sample by O2 and CF4 plasma. Metals of Au, Pd, and Cu have been e...

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Bibliographic Details
Published in:Diamond and related materials 2016-03, Vol.63, p.180-185
Main Authors: Li, Fengnan, Zhang, Jingwen, Wang, Xiaoliang, Liu, Zhangcheng, Wang, Wei, Li, Shuoye, Wang, Hong-Xing
Format: Article
Language:English
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Summary:In this study, investigation of Schottky junctions based on oxygen-/fluorine-terminated (100) diamond (O-/F-diamond) film has been carried out. Both of the O-/F-diamond surfaces have been formed on different areas of one (100) diamond sample by O2 and CF4 plasma. Metals of Au, Pd, and Cu have been evaporated on the diamond surfaces to form Schottky junctions, whose barrier heights on O-/F-diamond have been investigated by X-ray photoelectron spectroscopy technique, the results of which indicate that the barrier heights of the metals on O-diamond are about 1.70eV, and those on F-diamond are about 2.30eV, respectively. •Schottky junctions based on fluorine-terminated (100) diamond has been investigated by XPS measurements.•The Schottky barrier heights based on F-diamond are about 0.6eV higher than that based on O-diamond.•The Fermi level at the interface for both O-diamond and F-diamond is completely pinned.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2015.12.007