Laser induced single events in SRAMs

This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.

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Bibliographic Details
Main Authors: Palomar, C., Lopez-Calle, I., Franco, F. J., Agapito, J. A., Izquierdo, J. G.
Format: Conference Proceeding
Language:English
Subjects:
Conferences
Devices
Error detection
Errors
Laser
Lasers
MCU
memory
Microprocessors
Performance evaluation
Polymers
Pulsed lasers
Radiation effects
Semiconductor lasers
Semiconductors
Sensitivity
sensitivity map
SEU
Space radiation
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Description
Summary:This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
ISSN:2163-4971
2643-1300
DOI:10.1109/CDE.2013.6481390