Crystal-phase quantum dots in GaN quantum wires

We study the nature of excitons bound to I sub(1) basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of spontaneously formed GaN nanowire ensembles,...

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Bibliographic Details
Published in:Physical review. B 2016-03, Vol.93 (11), Article 115305
Main Authors: Corfdir, Pierre, Hauswald, Christian, Marquardt, Oliver, Flissikowski, Timur, Zettler, Johannes K., Fernández-Garrido, Sergio, Geelhaar, Lutz, Grahn, Holger T., Brandt, Oliver
Format: Article
Language:English
Subjects:
Condensed matter
Decay
Excitons
Gallium nitrides
Nanowires
Quantum dots
Quantum wires
Stacking faults
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Summary:We study the nature of excitons bound to I sub(1) basal plane stacking faults in ensembles of ultrathin GaN nanowires by continuous-wave and time-resolved photoluminescence spectroscopy. These ultrathin nanowires, obtained by the thermal decomposition of spontaneously formed GaN nanowire ensembles, are tapered and have tip diameters down to 6 nm. With decreasing nanowire diameter, we observe a strong blueshift of the transition originating from the radiative decay of stacking fault-bound excitons. Moreover, the radiative lifetime of this transition in the ultrathin nanowires is independent of temperature up to 60 K and significantly longer than that of the corresponding transition in as-grown nanowires. These findings reveal a zero-dimensional character of the confined exciton state and thus demonstrate that I sub(1) stacking faults in ultrathin nanowires act as genuine quantum dots.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.93.115305