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Structural, photoluminescence and picosecond nonlinear optical effect of In-doped ZnO nanowires
•We investigated the effect of In on the structural and optical properties of IZO.•The picosecond nonlinear optical characterized of IZO is studied.•The red shift in the VE of the IZO comes from the deep-level emission.•The blue shift in the UVE of the IZO comes from the free exciton recombination....
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Published in: | Optical materials 2016-05, Vol.55, p.73-77 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •We investigated the effect of In on the structural and optical properties of IZO.•The picosecond nonlinear optical characterized of IZO is studied.•The red shift in the VE of the IZO comes from the deep-level emission.•The blue shift in the UVE of the IZO comes from the free exciton recombination.
In-doped ZnO (IZO) nanowires were grown using the chemical vapour deposition method. The IZO nanowires have been characterized by scanning electronic microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and UV–Visible spectroscopy. The PL results demonstrated a larger band-gap for the IZO nanowires in comparison to the undoped ZnO. Two major emission peaks were observed for the IZO nanowires, one originated from the free exciton recombination (ultraviolet emission) and another possibly related to the deep-level emission (visible emission). Furthermore, the nonlinear optical characteristic of the nanowires was studied using picosecond Z-scan technique. The experimental results show that the two and three-photon absorption coefficient of samples were able to be observed. These studies make the promising potential applications of the samples in the development of multifunctional all-optical devices. |
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ISSN: | 0925-3467 1873-1252 |
DOI: | 10.1016/j.optmat.2016.03.016 |