Composition modulated InAsSb superlattice induced by non-incorporating Bismuth

We report a new method for synthesizing a composition superlattice with molecular beam epitaxy. A repeated structure of InAs(1−x)Sb(x)/InAs(1−y)Sb(y) was induced by periodic cycling of a non-incorporating Bi-flux, while keeping the In-, As- and Sb-fluxes constant. The Bi acts as a virtual chemical v...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2015-12, Vol.432, p.105-107
Main Authors: Sarney, Wendy L., Svensson, Stefan P.
Format: Article
Language:English
Subjects:
A1. Crystal structure
A1. X-ray diffraction
A3. Molecular beam epitaxy
B2. Semiconducting III–V materials
Bismuth
Constants
Crystal growth
Diffraction
Modulation
Molecular beam epitaxy
Superlattices
Valves
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report a new method for synthesizing a composition superlattice with molecular beam epitaxy. A repeated structure of InAs(1−x)Sb(x)/InAs(1−y)Sb(y) was induced by periodic cycling of a non-incorporating Bi-flux, while keeping the In-, As- and Sb-fluxes constant. The Bi acts as a virtual chemical valve. High-resolution X-ray diffraction demonstrated a modulation ratio of x/y=1:1.3. Composition broadening could not be detected within the experimental resolution. The Bi, despite not incorporating, also does not remain on the growing surface after the incoming Bi-flux is terminated. •We report a new method for synthesizing a composition superlattice with MBE.•A repeated InAsSb structure was induced by periodic cycling of non-incorporating Bi.•The Bi acts as a virtual chemical valve.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2015.08.026