A Novel Sloped Field Plate-Enhanced Ultra-Short Edge Termination Structure

A novel sloped field plate (FP)-enhanced ultra-short edge termination structure is proposed and experimentally demonstrated. The structure features a benzocyclobutene dielectric filled trench, and is fabricated along with a high-voltage p-i-n diode. In addition, a sloped FP is put inside the trench...

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Bibliographic Details
Published in:IEEE electron device letters 2016-04, Vol.37 (4), p.471-473
Main Authors: Wentao Yang, Hao Feng, Xiangming Fang, Onozawa, Yuichi, Tanaka, Hiroyuki, Sin, Johnny K. O.
Format: Article
Language:English
Subjects:
Anodes
Avalanche breakdown
Breakdown
Devices
Dielectrics
Diodes
Electric potential
Electrodes
Fabrication
Junctions
Plates (structural members)
Silicon
Trenches
Voltage
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Summary:A novel sloped field plate (FP)-enhanced ultra-short edge termination structure is proposed and experimentally demonstrated. The structure features a benzocyclobutene dielectric filled trench, and is fabricated along with a high-voltage p-i-n diode. In addition, a sloped FP is put inside the trench and connected to the anode electrode. The fabricated device shows a breakdown voltage of 755 V, and is confirmed as the ideal planar junction breakdown voltage of the p-i-n diode. The proposed edge termination structure has a total width of 35 μm, which is ~1/5 the size of a conventional termination structure using the guard rings approach.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2522640