Optimization of electrode structure for flip-chip HVLED via two-level metallization

In this article, we demonstrated an optimized electrode structure for high voltage LED (HVLED) using a two‐level metallization technique. The first‐level metallization is to form interdigitated p and n electrodes with narrow metal fingers. After passivation, a second‐level reflective metallization w...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2016-05, Vol.213 (5), p.1199-1203
Main Authors: Cai, Yuefei, Zou, Xinbo, Chong, Wing Cheung, Lau, Kei May
Format: Article
Language:English
Subjects:
Chips
Electrodes
Electronics industry
Fingers
high voltage light-emitting diodes
High voltages
Illumination
Lighting
Materials science
metallization
Metallizing
Optimization
solid state lighting
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Summary:In this article, we demonstrated an optimized electrode structure for high voltage LED (HVLED) using a two‐level metallization technique. The first‐level metallization is to form interdigitated p and n electrodes with narrow metal fingers. After passivation, a second‐level reflective metallization was deposited to form a continuous reflector. Comparing the performance of HVLEDs with bar shape electrode, square shape electrode, and n finger interposed electrode, the HVLEDs with interdigitated p and n finger electrodes show better current uniformity, higher light output power (LOP) and larger wall plug efficiency (WPE). The LOP of such single HVLED chip with 8 sub LED cells on pattern sapphire substrate sample reaches 500 mW at 100 mA current injection. Using flip‐chip bonding technique to connect four such chips serially, LOP can reach 2 W at 100 mA drive current. The high brightness HVLED with optimized electrodes enables flexible driver designs for solid state lighting and other applications.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201532803