Datta-and-Das spin transistor controlled by a high-frequency electromagnetic field

We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schrodinger problem for dressed electrons, we demonstrated that the field drastically...

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Bibliographic Details
Published in:Physical review. B 2016-04, Vol.93 (16), Article 165307
Main Authors: Sheremet, A. S., Kibis, O. V., Kavokin, A. V., Shelykh, I. A.
Format: Article
Language:English
Subjects:
Condensed matter
Devices
Dressing
Electromagnetic fields
Schroedinger equation
Semiconductor devices
Transistors
Transport
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Summary:We developed the theory of spin dependent transport through a spin-modulator device (so-called Datta-and-Das spin transistor) in the presence of a high-frequency electromagnetic field (dressing field). Solving the Schrodinger problem for dressed electrons, we demonstrated that the field drastically modifies the spin transport. In particular, the dressing field leads to renormalization of spin-orbit coupling constants that varies conductivity of the spin transistor. The present effect paves the way for controlling the spin-polarized electron transport with light in prospective spin-optronic devices.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.93.165307