Transport properties of the Cu sub(2)ZnSnS sub(4) bulk systems: Effects of nonstoichiometry and defect formation

We have synthesized Cu sub(2)ZnSnS sub(4) (CZTS) sintered compacts with different compositions and investigated their transport properties to understand effects of nonstoichiometry and defects. The synthesized Cu sub(2)ZnSnS sub(4), whose nominal molar ratios were stoichiometric, was a p-type semico...

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Bibliographic Details
Published in:Journal of alloys and compounds 2016-02, Vol.657, p.179-183
Main Authors: Hazama, Hirofumi, Tajima, Shin, Masuoka, Yumi, Asahi, Ryoji
Format: Article
Language:English
Subjects:
Antisite defects
Carrier density
Carrier mobility
Carriers
CZT
Defects
Tin
Transport properties
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Summary:We have synthesized Cu sub(2)ZnSnS sub(4) (CZTS) sintered compacts with different compositions and investigated their transport properties to understand effects of nonstoichiometry and defects. The synthesized Cu sub(2)ZnSnS sub(4), whose nominal molar ratios were stoichiometric, was a p-type semiconductor and had a low carrier mobility of 0.09 cm super(2)/Vs with a carrier concentration of 5 10 super(18)/cm super(3) at room temperature. The carrier mobility increased by lowering the carrier concentration when the Zn or Sn content of CZTS increased. It probably originates in reducing antisite defects at Zn and/or Sn site, which generate hole carriers and scattering centers of carriers.
ISSN:0925-8388
DOI:10.1016/j.jallcom.2015.10.032