Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2

Single‐photon emitters in monolayer WSe2 are created at the nanoscale gap between two single‐crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential wel...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-09, Vol.28 (33), p.7101-7105
Main Authors: Kern, Johannes, Niehues, Iris, Tonndorf, Philipp, Schmidt, Robert, Wigger, Daniel, Schneider, Robert, Stiehm, Torsten, Michaelis de Vasconcellos, Steffen, Reiter, Doris E., Kuhn, Tilmann, Bratschitsch, Rudolf
Format: Article
Language:English
Subjects:
atomically thin semiconductors
nanogaps
single-photon emitters
strain engineering
super-localization microscopy
Online Access:Get full text
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Summary:Single‐photon emitters in monolayer WSe2 are created at the nanoscale gap between two single‐crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single‐photon emitters are localized there with a precision better than 140 nm.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201600560