Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures

van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)­electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2016-09, Vol.8 (35), p.23222-23229
Main Authors: Aretouli, Kleopatra Emmanouil, Tsoutsou, Dimitra, Tsipas, Polychronis, Marquez-Velasco, Jose, Aminalragia Giamini, Sigiava, Kelaidis, Nicolaos, Psycharis, Vassilis, Dimoulas, Athanasios
Format: Article
Language:English
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Summary:van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)­electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.6b02933