The Impact of Shallow-Trench-Isolation Mechanical Stress on the Hysteresis Effect of Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effects

The impact of shallow trench isolation (STI) mechanical stress on the hysteresis effect in the output characteristics is measured in partially depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). We develop I sub(D) hysteresis, which is defined as th...

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Bibliographic Details
Published in:Chinese physics letters 2014-12, Vol.31 (12), p.126601-126601
Main Authors: Luo, Jie-Xin, Chen, Jing, Chai, Zhan, Lü, Kai, He, Wei-Wei, Yang, Yan, Wang, Xi
Format: Article
Language:English
Subjects:
Depletion
Devices
Field effect transistors
Hysteresis
MOSFETs
Semiconductor devices
Stresses
Trenches
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Summary:The impact of shallow trench isolation (STI) mechanical stress on the hysteresis effect in the output characteristics is measured in partially depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). We develop I sub(D) hysteresis, which is defined as the difference between I sub(D) versus V sub(D) forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in I sub(D) hysteresis. The experimental results show that I sub(D) hysteresis declined as the STI mechanical stress increases. We also elaborate on the impact of STI mechanical stress on the I sub(D) hysteresis of PD SOI n-type MOSFETs.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/12/126601