Improvement of the Quality of a GaN Epilayer by Employing a SiN sub(x) Interlayer

GaN epilayers with a porous SiN sub(x) interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. It is found that the crystalline qualities are significantly improved with SiN sub(x) growth. The improvement is attributed to the reduction of the density of threa...

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Bibliographic Details
Published in:Chinese physics letters 2012-01, Vol.29 (8), p.088102-1-088102-4
Main Authors: YANG, De-Chao, LIANG, Hong-Wei, SONG, Shi-Wei, LIU, Yang, SHEN, Ren-Sheng, LUO, Ying-Min, ZHAO, Hai-Feng, DU, Guo-Tong
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Crystal structure
Density
Interlayers
Reduction
Sapphire
Substrates
Threading dislocations
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Summary:GaN epilayers with a porous SiN sub(x) interlayer were grown by metal-organic chemical vapor deposition on c-plane sapphire substrates. It is found that the crystalline qualities are significantly improved with SiN sub(x) growth. The improvement is attributed to the reduction of the density of threading dislocations (TDs) by an over-growth process of GaN grown on a SiN sub(x) interlayer. The influence mechanism of SiN sub(x) interlayers on GaN growth mode is also discussed.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/29/8/088102