Copper electroplating technique for efficient manufacturing of low-cost silicon interposers

Through-silicon via (TSV) technology is the heart of 3D integration technology. An approach was proposed to simplify the integrated process flows. Dry film photoresist was introduced in the through via filling process. Cu-TSVs and Cu-pads were formed simultaneously through the electroplating process...

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Bibliographic Details
Published in:Microelectronic engineering 2016-01, Vol.150, p.39-42
Main Authors: Zhang, Yazhou, Wang, Huiying, Sun, Yunna, Wu, Kaifeng, Wang, Hong, Cheng, Ping, Ding, Guifu
Format: Article
Language:English
Subjects:
3D integrated process
Copper
Copper electroplating
COSTS
Dry film photoresist
DRYING
ELECTROPLATING
MANUFACTURE
Microelectronics
Photoresists
Silicon
Three dimensional
TSV technology
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Summary:Through-silicon via (TSV) technology is the heart of 3D integration technology. An approach was proposed to simplify the integrated process flows. Dry film photoresist was introduced in the through via filling process. Cu-TSVs and Cu-pads were formed simultaneously through the electroplating process, which diminished the interface between Cu-TSVs and Cu-pads. This approach simplified the integrated process flows, enhanced the reliability, and lowered the costs dramatically compared with the most preferred TSV fabrication method in the industry today, which would have a broad application in the 3D integration industry. [Display omitted] •Dry film photoresist was introduced in the through via filling process.•Cu-TSVs and Cu-pad were electroplated simultaneously, which diminished the interface.•The method simplifies the process flows and lowers the process costs dramatically.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2015.11.005