Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature...

Full description

Saved in:
Bibliographic Details
Published in:Chinese physics B 2016-04, Vol.25 (4), p.444-449
Main Author: 孙亚宾 付军 王玉东 周卫 张伟 刘志弘
Format: Article
Language:English
Subjects:
Circuit design
Equivalent circuits
Extraction
HBT
Mathematical models
Semiconductor devices
SiGe
Silicon germanides
Temperature dependence
Transistors
小信号等效电路
提取
模型参数
温度依赖关系
温度依赖性
温度范围
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, temperature dependences of small-signal model parameters in the SiGe HBT HICUM model are presented. Electrical elements in the small-signal equivalent circuit are first extracted at each temperature, then the temperature dependences are determined by the series of extracted temperature coefficients, based on the established temperature for- mulas for corresponding model parameters. The proposed method is validated by a 1x 0.2 x 16 μm2 SiGe HBT over a wide temperature range （from 218 K to 473 K）, and good matching is obtained between the extracted and modeled resuits. Therefore, we believe that the proposed extraction flow of model parameter temperature dependence is reliable for characterizing the transistor performance and guiding the circuit design over a wide temperature range.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/4/048501