The optimization of FA/O barrier slurry with respect to removal rate selectivity on patterned Cu wafers

Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barrier/TEOS would reduce erosion and dishing defects on patterned Cu wafers. In this stu...

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Bibliographic Details
Published in:Journal of semiconductors 2016-02, Vol.37 (2), p.160-164
Main Author: 胡轶 李炎 刘玉岭 何彦刚
Format: Article
Language:English
Subjects:
Barriers
Demand
Dielectrics
Polishing
Selectivity
Semiconductors
Slurries
Wafers
介电材料
优化
去除率
工业生产
抛光液
氧
表面活性剂
铜
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Summary:Because the polishing of different materials is required in barrier chemical mechanical planariza- tion （CMP） processes, the development of a kind of barrier slurry with improved removal rate selectivity for Cu/barrier/TEOS would reduce erosion and dishing defects on patterned Cu wafers. In this study, we developed a new benzotriazole-free barrier slurry named FA/O barrier slurry, containing 20 mL/L of the chelating agent FA/O, 5 mL/L surfactant, and a 1：5 concentration of abrasive particles. By controlling the polishing slurry ingredients, the removal rate of different materials could be controlled. For process integration considerations, the effect of the FA/O barrier slurry on the dielectric layer of the patterned Cu wafer was investigated. After CMP processing by the FA/O barrier slurry, the characteristics of the dielectric material were tested. The results showed that the dielectric characteristics met demands for industrial production. The current leakage was of pA scale. The resistance and capacitance were 2.4 k and 2.3 pF, respectively. The dishing and erosion defects were both below 30 nm in size. CMP-processed wafers using this barrier slurry could meet industrial production demands.
ISSN:1674-4926
DOI:10.1088/1674-4926/37/2/026003