A reference voltage in capacitor-resister hybrid SAR ADC for front-end readout system of CZT detector

• Published in: Journal of semiconductors 2016, Vol.37 (1), p.113-118
• Main Authors: Liu, Wei, Wei, Tingcun, Li, Bo, Yang, Lifeng, Hu, Yongcai
• Format: Article
• Language: English
• Subjects: ADC; Coefficients; CZT; Detectors; Electric potential; Energy gaps (solid state); Power consumption; SAR; Semiconductors; Voltage; 参考电压; 可变电容; 探测器; 电阻; 读出系统
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/37/1/015005

An on-chip reference voltage has been designed in capacitor-resister hybrid SAR ADC for CZT detec- tor with the TSMC 0.35 μm 2P4M CMOS process. The voltage reference has a dynamic load since using variable capacitors and resistances, which need a large driving ability to deal with the current related to the time and sampling rate. Most of the previous articles about the reference for ADC present only the bandgap part for a low temperature coefficient and high PSRR. However, it is not enough and overall, it needs to consider the output driving ability. The proposed voltage reference is realized by the band-gap reference, voltage generator and output buffer. Apart from a low temperature coefficient and high PSRR, it has the features of a large driving ability and low power con- sumption. What is more, for CZT detectors application in space, a radiation-hardened design has been considered. The measurement results show that the output reference voltage of the buffer is 4.096 V. When the temperature varied from 0 to 80 ℃, the temperature coefficient is 12.2 ppm/℃. The PSRR was -70 dB @ 100 kHz. The drive current of the reference can reach up to 10 mA. The area of the voltage reference in the SAR ADC chip is only 449 × 614μm2. The total power consumption is only 1.092 mW.