67‐1: Novel LTPS Technology for Large Substrate

We developed Partial Laser Anneal Silicon (PLAS) TFT of novel LTPS technology for large substrate, which had the mobility of 28.1 cm2/Vs in bottom gate structure. Moreover there is no limit of substrate size, such as Gen10 and more. This innovative technology can enable the conversion from an α‐Si T...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2016-05, Vol.47 (1), p.915-918
Main Authors: Utsugi, Satoru, Nodera, Nobutake, Matsumoto, Takao, Kobayashi, Kazuki, Oketani, Taimi
Format: Article
Language:English
Subjects:
Annealing
Conversion
Gates
Gen10
Laser Anneal
Lasers
LTPS
Outdoor
Silicon substrates
Substrates
Television
TFT
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Summary:We developed Partial Laser Anneal Silicon (PLAS) TFT of novel LTPS technology for large substrate, which had the mobility of 28.1 cm2/Vs in bottom gate structure. Moreover there is no limit of substrate size, such as Gen10 and more. This innovative technology can enable the conversion from an α‐Si TFT to a high mobility TFT most easily and inexpensively. Photo‐stability of PLAS will be suitable to OLED backplane, HDR TV, and outdoor IDP.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10849