Structural, optical and electrical properties of Sn sub()

Tin sulfide (Sn sub(x) S sub(y)) thin films were prepared by a spray ultrasonic technique on glass substrate at 300 degree C. The influence of deposition time t = 2, 4, 6, 8 and 10 min on different properties of thin films, such as (XRD), photoluminescence (PL) and (UV) spectroscopy visible spectrum...

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Published in:Journal of semiconductors 2016-03, Vol.37 (3), p.32001-32006
Main Authors: Kherchachi, IB, Attaf, A, Saidi, H, Bouhdjer, A, Bendjedidi, H, Benkhetta, Y, Azizi, R
Format: Article
Language:English
Subjects:
Deposition
Glass
Photoluminescence
Semiconductors
Spectroscopy
Thin films
Tin
Visible spectrum
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container_title Journal of semiconductors
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creator Kherchachi, IB
Attaf, A
Saidi, H
Bouhdjer, A
Bendjedidi, H
Benkhetta, Y
Azizi, R
description Tin sulfide (Sn sub(x) S sub(y)) thin films were prepared by a spray ultrasonic technique on glass substrate at 300 degree C. The influence of deposition time t = 2, 4, 6, 8 and 10 min on different properties of thin films, such as (XRD), photoluminescence (PL) and (UV) spectroscopy visible spectrum and four-point were investigated. X-ray diffraction showed that thin films crystallized in SnS sub(2), SnS, and Sn sub(2)S sub(3) phases, but the most prominent one is SnS sub(2). The results of the (UV) spectroscopy visible spectrum show that the film which was deposited at 4 min has a large transmittance of 60% in the visible region. The photoluminescence spectra exhibited the luminescent peaks in the visible region, which shows its potential application in photovoltaic devices. The electrical resistivity ( rho ) values of Sn sub(x)S sub(y) films have changed from 8.1 10 super(-4) to 1.62 Omega .cm with deposition time.
doi_str_mv 10.1088/1674-4926/37/3/032001
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subjects Deposition
Glass
Photoluminescence
Semiconductors
Spectroscopy
Thin films
Tin
Visible spectrum
title Structural, optical and electrical properties of Sn sub()
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