Tuning the response of non-allowed Raman modes in GaAs nanowires

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting Raman scattered light with light polarized...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2016-03, Vol.49 (9), p.95103-95109
Main Authors: Amaduzzi, Francesca, Alarcón-Lladó, Esther, Hautmann, Hubert, Tanta, Rawa, Matteini, Federico, Tütüncüoǧlu, Gözde, Vosch, Tom, Nygård, Jesper, Jespersen, Thomas, Uccelli, Emanuele, Fontcuberta i Morral, Anna
Format: Article
Language:English
Subjects:
doping
GaAs
Gallium arsenide
Nanostructure
Nanowires
phonon-plasmon interacton
Phonons
photonic resonances
Photonics
Plasmons
Polarization
Raman spectroscopy
semiconductor nanowire
Tuning
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Summary:We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting Raman scattered light with light polarized along the radial direction. Thanks to the photonic nature of the light-nanowire interaction, light polarization inside the nanowire is modified. This results in the excitation of LO modes, forbidden on {1 1 0} surfaces. We apply this new configuration to the measurement of carrier concentration on doped GaAs nanowires. These results open new perspectives for the study of the interaction of free-carriers or plasmons with optical phonons in nanostructures.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/49/9/095103