Tuning the response of non-allowed Raman modes in GaAs nanowires

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting Raman scattered light with light polarized...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2016-03, Vol.49 (9), p.95103-95109
Main Authors: Amaduzzi, Francesca, Alarcón-Lladó, Esther, Hautmann, Hubert, Tanta, Rawa, Matteini, Federico, Tütüncüoǧlu, Gözde, Vosch, Tom, Nygård, Jesper, Jespersen, Thomas, Uccelli, Emanuele, Fontcuberta i Morral, Anna
Format: Article
Language:English
Subjects:
doping
GaAs
Gallium arsenide
Nanostructure
Nanowires
phonon-plasmon interacton
Phonons
photonic resonances
Photonics
Plasmons
Polarization
Raman spectroscopy
semiconductor nanowire
Tuning
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c358t-6399056ee1dad256608a9513a6560037150bc2321a70abf9a5825b326221ab983
cites cdi_FETCH-LOGICAL-c358t-6399056ee1dad256608a9513a6560037150bc2321a70abf9a5825b326221ab983
container_end_page 95109
container_issue 9
container_start_page 95103
container_title Journal of physics. D, Applied physics
container_volume 49
creator Amaduzzi, Francesca
Alarcón-Lladó, Esther
Hautmann, Hubert
Tanta, Rawa
Matteini, Federico
Tütüncüoǧlu, Gözde
Vosch, Tom
Nygård, Jesper
Jespersen, Thomas
Uccelli, Emanuele
Fontcuberta i Morral, Anna
description We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting Raman scattered light with light polarized along the radial direction. Thanks to the photonic nature of the light-nanowire interaction, light polarization inside the nanowire is modified. This results in the excitation of LO modes, forbidden on {1 1 0} surfaces. We apply this new configuration to the measurement of carrier concentration on doped GaAs nanowires. These results open new perspectives for the study of the interaction of free-carriers or plasmons with optical phonons in nanostructures.
doi_str_mv 10.1088/0022-3727/49/9/095103
format article
fullrecord <record><control><sourceid>proquest_iop_j</sourceid><recordid>TN_cdi_proquest_miscellaneous_1825459698</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1825459698</sourcerecordid><originalsourceid>FETCH-LOGICAL-c358t-6399056ee1dad256608a9513a6560037150bc2321a70abf9a5825b326221ab983</originalsourceid><addsrcrecordid>eNp9kF1LwzAUhoMoOKc_QciN4E3tSdKkzZ1j6BQGgszrkLapdrRJTVaG_97MinghXh04PO_5eBC6JHBDoChSAEoTltM8zWQqU5CcADtCM8IESUQm2DGa_TCn6CyELQBwUZAZut2MtrWvePdmsDdhcDYY7BpsnU1017m9qfGz7rXFvatNwK3FK70I2Grr9m1MnKOTRnfBXHzXOXq5v9ssH5L10-pxuVgnFePFLhFMyrjSGFLrmnIhoNDxTqYFFwAsJxzKijJKdA66bKTmBeUlo4LGVikLNkfX09zBu_fRhJ3q21CZrtPWuDEoEvmMS_GF8gmtvAvBm0YNvu21_1AE1MGYOthQBxsqk0qqyVjMXU251g1q60Zv40Oq_s2ooW4iR_7g_p_9CVoEdu8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1825459698</pqid></control><display><type>article</type><title>Tuning the response of non-allowed Raman modes in GaAs nanowires</title><source>Institute of Physics</source><creator>Amaduzzi, Francesca ; Alarcón-Lladó, Esther ; Hautmann, Hubert ; Tanta, Rawa ; Matteini, Federico ; Tütüncüoǧlu, Gözde ; Vosch, Tom ; Nygård, Jesper ; Jespersen, Thomas ; Uccelli, Emanuele ; Fontcuberta i Morral, Anna</creator><creatorcontrib>Amaduzzi, Francesca ; Alarcón-Lladó, Esther ; Hautmann, Hubert ; Tanta, Rawa ; Matteini, Federico ; Tütüncüoǧlu, Gözde ; Vosch, Tom ; Nygård, Jesper ; Jespersen, Thomas ; Uccelli, Emanuele ; Fontcuberta i Morral, Anna</creatorcontrib><description>We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting Raman scattered light with light polarized along the radial direction. Thanks to the photonic nature of the light-nanowire interaction, light polarization inside the nanowire is modified. This results in the excitation of LO modes, forbidden on {1 1 0} surfaces. We apply this new configuration to the measurement of carrier concentration on doped GaAs nanowires. These results open new perspectives for the study of the interaction of free-carriers or plasmons with optical phonons in nanostructures.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/49/9/095103</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>doping ; GaAs ; Gallium arsenide ; Nanostructure ; Nanowires ; phonon-plasmon interacton ; Phonons ; photonic resonances ; Photonics ; Plasmons ; Polarization ; Raman spectroscopy ; semiconductor nanowire ; Tuning</subject><ispartof>Journal of physics. D, Applied physics, 2016-03, Vol.49 (9), p.95103-95109</ispartof><rights>2016 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-6399056ee1dad256608a9513a6560037150bc2321a70abf9a5825b326221ab983</citedby><cites>FETCH-LOGICAL-c358t-6399056ee1dad256608a9513a6560037150bc2321a70abf9a5825b326221ab983</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Amaduzzi, Francesca</creatorcontrib><creatorcontrib>Alarcón-Lladó, Esther</creatorcontrib><creatorcontrib>Hautmann, Hubert</creatorcontrib><creatorcontrib>Tanta, Rawa</creatorcontrib><creatorcontrib>Matteini, Federico</creatorcontrib><creatorcontrib>Tütüncüoǧlu, Gözde</creatorcontrib><creatorcontrib>Vosch, Tom</creatorcontrib><creatorcontrib>Nygård, Jesper</creatorcontrib><creatorcontrib>Jespersen, Thomas</creatorcontrib><creatorcontrib>Uccelli, Emanuele</creatorcontrib><creatorcontrib>Fontcuberta i Morral, Anna</creatorcontrib><title>Tuning the response of non-allowed Raman modes in GaAs nanowires</title><title>Journal of physics. D, Applied physics</title><addtitle>JPhysD</addtitle><addtitle>J. Phys. D: Appl. Phys</addtitle><description>We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting Raman scattered light with light polarized along the radial direction. Thanks to the photonic nature of the light-nanowire interaction, light polarization inside the nanowire is modified. This results in the excitation of LO modes, forbidden on {1 1 0} surfaces. We apply this new configuration to the measurement of carrier concentration on doped GaAs nanowires. These results open new perspectives for the study of the interaction of free-carriers or plasmons with optical phonons in nanostructures.</description><subject>doping</subject><subject>GaAs</subject><subject>Gallium arsenide</subject><subject>Nanostructure</subject><subject>Nanowires</subject><subject>phonon-plasmon interacton</subject><subject>Phonons</subject><subject>photonic resonances</subject><subject>Photonics</subject><subject>Plasmons</subject><subject>Polarization</subject><subject>Raman spectroscopy</subject><subject>semiconductor nanowire</subject><subject>Tuning</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kF1LwzAUhoMoOKc_QciN4E3tSdKkzZ1j6BQGgszrkLapdrRJTVaG_97MinghXh04PO_5eBC6JHBDoChSAEoTltM8zWQqU5CcADtCM8IESUQm2DGa_TCn6CyELQBwUZAZut2MtrWvePdmsDdhcDYY7BpsnU1017m9qfGz7rXFvatNwK3FK70I2Grr9m1MnKOTRnfBXHzXOXq5v9ssH5L10-pxuVgnFePFLhFMyrjSGFLrmnIhoNDxTqYFFwAsJxzKijJKdA66bKTmBeUlo4LGVikLNkfX09zBu_fRhJ3q21CZrtPWuDEoEvmMS_GF8gmtvAvBm0YNvu21_1AE1MGYOthQBxsqk0qqyVjMXU251g1q60Zv40Oq_s2ooW4iR_7g_p_9CVoEdu8</recordid><startdate>20160309</startdate><enddate>20160309</enddate><creator>Amaduzzi, Francesca</creator><creator>Alarcón-Lladó, Esther</creator><creator>Hautmann, Hubert</creator><creator>Tanta, Rawa</creator><creator>Matteini, Federico</creator><creator>Tütüncüoǧlu, Gözde</creator><creator>Vosch, Tom</creator><creator>Nygård, Jesper</creator><creator>Jespersen, Thomas</creator><creator>Uccelli, Emanuele</creator><creator>Fontcuberta i Morral, Anna</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20160309</creationdate><title>Tuning the response of non-allowed Raman modes in GaAs nanowires</title><author>Amaduzzi, Francesca ; Alarcón-Lladó, Esther ; Hautmann, Hubert ; Tanta, Rawa ; Matteini, Federico ; Tütüncüoǧlu, Gözde ; Vosch, Tom ; Nygård, Jesper ; Jespersen, Thomas ; Uccelli, Emanuele ; Fontcuberta i Morral, Anna</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-6399056ee1dad256608a9513a6560037150bc2321a70abf9a5825b326221ab983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>doping</topic><topic>GaAs</topic><topic>Gallium arsenide</topic><topic>Nanostructure</topic><topic>Nanowires</topic><topic>phonon-plasmon interacton</topic><topic>Phonons</topic><topic>photonic resonances</topic><topic>Photonics</topic><topic>Plasmons</topic><topic>Polarization</topic><topic>Raman spectroscopy</topic><topic>semiconductor nanowire</topic><topic>Tuning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Amaduzzi, Francesca</creatorcontrib><creatorcontrib>Alarcón-Lladó, Esther</creatorcontrib><creatorcontrib>Hautmann, Hubert</creatorcontrib><creatorcontrib>Tanta, Rawa</creatorcontrib><creatorcontrib>Matteini, Federico</creatorcontrib><creatorcontrib>Tütüncüoǧlu, Gözde</creatorcontrib><creatorcontrib>Vosch, Tom</creatorcontrib><creatorcontrib>Nygård, Jesper</creatorcontrib><creatorcontrib>Jespersen, Thomas</creatorcontrib><creatorcontrib>Uccelli, Emanuele</creatorcontrib><creatorcontrib>Fontcuberta i Morral, Anna</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Amaduzzi, Francesca</au><au>Alarcón-Lladó, Esther</au><au>Hautmann, Hubert</au><au>Tanta, Rawa</au><au>Matteini, Federico</au><au>Tütüncüoǧlu, Gözde</au><au>Vosch, Tom</au><au>Nygård, Jesper</au><au>Jespersen, Thomas</au><au>Uccelli, Emanuele</au><au>Fontcuberta i Morral, Anna</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tuning the response of non-allowed Raman modes in GaAs nanowires</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><stitle>JPhysD</stitle><addtitle>J. Phys. D: Appl. Phys</addtitle><date>2016-03-09</date><risdate>2016</risdate><volume>49</volume><issue>9</issue><spage>95103</spage><epage>95109</epage><pages>95103-95109</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting Raman scattered light with light polarized along the radial direction. Thanks to the photonic nature of the light-nanowire interaction, light polarization inside the nanowire is modified. This results in the excitation of LO modes, forbidden on {1 1 0} surfaces. We apply this new configuration to the measurement of carrier concentration on doped GaAs nanowires. These results open new perspectives for the study of the interaction of free-carriers or plasmons with optical phonons in nanostructures.</abstract><pub>IOP Publishing</pub><doi>10.1088/0022-3727/49/9/095103</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0022-3727
ispartof Journal of physics. D, Applied physics, 2016-03, Vol.49 (9), p.95103-95109
issn 0022-3727
1361-6463
language eng
recordid cdi_proquest_miscellaneous_1825459698
source Institute of Physics
subjects doping
GaAs
Gallium arsenide
Nanostructure
Nanowires
phonon-plasmon interacton
Phonons
photonic resonances
Photonics
Plasmons
Polarization
Raman spectroscopy
semiconductor nanowire
Tuning
title Tuning the response of non-allowed Raman modes in GaAs nanowires
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T06%3A35%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_iop_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tuning%20the%20response%20of%20non-allowed%20Raman%20modes%20in%20GaAs%20nanowires&rft.jtitle=Journal%20of%20physics.%20D,%20Applied%20physics&rft.au=Amaduzzi,%20Francesca&rft.date=2016-03-09&rft.volume=49&rft.issue=9&rft.spage=95103&rft.epage=95109&rft.pages=95103-95109&rft.issn=0022-3727&rft.eissn=1361-6463&rft.coden=JPAPBE&rft_id=info:doi/10.1088/0022-3727/49/9/095103&rft_dat=%3Cproquest_iop_j%3E1825459698%3C/proquest_iop_j%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c358t-6399056ee1dad256608a9513a6560037150bc2321a70abf9a5825b326221ab983%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1825459698&rft_id=info:pmid/&rfr_iscdi=true