Effects of crossed electric and magnetic fields on the interband optical absorption spectra of variably spaced semiconductor superlattices

• Published in: Physica. B, Condensed matter Condensed matter, 2016-05, Vol.488, p.72-82
• Main Authors: Zuleta, J.N., Reyes-Gómez, E.
• Format: Article
• Language: English
• Subjects: Absorption coefficient; Absorption spectra; Condensed matter; Electric fields; Interband absorption; Magnetic fields; Optical properties; Quenching; Semiconductor heterostructures; Semiconductors; Superlattices
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2016.02.011

The interband optical absorption spectra of a GaAs–Ga1−xAlxAs variably spaced semiconductor superlattice under crossed in-plane magnetic and growth-direction applied electric fields are theoretically investigated. The electronic structure, transition strengths and interband absorption coefficients are analyzed within the weak and strong magnetic-field regimes. A dramatic quenching of the absorption coefficient is observed, in the weak magnetic-field regime, as the applied electric field is increased, in good agreement with previous experimental measurements performed in a similar system under growth-direction applied electric fields. A decrease of the resonant tunneling in the superlattice is also theoretically obtained in the strong magnetic-field regime. Moreover, in this case, we found an interband absorption coefficient weakly dependent on the applied electric field. Present theoretical results suggest that an in-plane magnetic field may be used to tune the optical properties of variably spaced semiconductor superlattices, with possible future applications in solar cells and magneto-optical devices.