Monolithic integration of metastable alpha -In sub(2)Se sub(3) thin film on H-passivated Si(1 1 1) for photovoltaic applications

The metastable alpha -In sub(2)Se sub(3) thin film is epitaxially integrated on H-passivated Si (1 1 1) substrates to build a novel heterojunction solar cell by molecular beam epitaxy. The growth of In sub(2)Se sub(3) on H-Si(1 1 1) at low temperature initiates as an amorphous layer then followed by...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2016-04, Vol.49 (14), p.145108-145113
Main Authors: Li, Handong, Ren, Wuyang, Wang, Gaoyun, Gao, Lei, Peng, Ruoming, Li, Hui, Zhang, Pingyi, Shafa, Muhammad, Tong, Xin, Luo, Siyuan, Zhou, Zhihua, Ji, Haining, Wu, Jiang, Niu, Xiaobin, Wang, Zhiming
Format: Article
Language:English
Subjects:
Construction
Film thickness
Heterojunctions
Photovoltaic cells
Photovoltaic conversion
Silicon substrates
Solar cells
Thin films
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Summary:The metastable alpha -In sub(2)Se sub(3) thin film is epitaxially integrated on H-passivated Si (1 1 1) substrates to build a novel heterojunction solar cell by molecular beam epitaxy. The growth of In sub(2)Se sub(3) on H-Si(1 1 1) at low temperature initiates as an amorphous layer then followed by re-crystalline of alpha phase film. Electronic transport properties of alpha -In sub(2)Se sub(3)/p-Si heterostructure are studied. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of ~0.21 eV at the alpha -In sub(2)Se sub(3)/p-Si interface. A photovoltaic conversion efficiency of 2% is measured for the heterojunction with optimized In sub(2)Se sub(3) film thickness.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/49/14/145108