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Graphene-GaAs-graphene stacked layers for the improvement of the transmission at the wavelength of 1.55 μm

Transmission filter operating at the wavelength of 1.55 μm and based on stacked graphene-GaAs-graphene layers separated by air gaps is presented. By using the transfer matrix method (TMM), we show that the addition of a graphene layer at each interface of a GaAs-based stratified structure, which ini...

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Bibliographic Details
Published in:Optical materials 2016-07, Vol.57, p.120-124
Main Authors: Ajlani, Hosni, Azizi, Mohamed Karim, Gharsallah, Ali, Oueslati, Meherzi
Format: Article
Language:English
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Summary:Transmission filter operating at the wavelength of 1.55 μm and based on stacked graphene-GaAs-graphene layers separated by air gaps is presented. By using the transfer matrix method (TMM), we show that the addition of a graphene layer at each interface of a GaAs-based stratified structure, which initially exhibit only 30% transmission at 1.55 μm, allows the active control of the transmission by the adjustment of the graphene chemical potential. Transmission of almost 100% at the wavelength of 1.55 μm is achieved after addition of graphene layers. These results show the potential role of stacked graphene-GaAs-graphene layers in the development of new optical active communications devices. •GaAs-based transmission filter operating at the wavelength of 1.55 μm with only 30% transmission is presented.•Addition of a graphene layer at each interface allows the active control of the transmission.•Transmission of almost 100% at the wavelength of 1.55 μm is achieved in the vicinity of near zero epsilon graphene.•These results show the potential role of stacked graphene-GaAs-graphene layers in the development of optical active devices.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2016.04.031