Modeling and optimization of CdS/CuIn1−xGaxSe2 structure for solar cells applications

This work deals with the modeling and optimization of the CuInGaSe/CdS based structure, for photovoltaics. In this study we took into consideration the effect of the concentration of the alloy and the temperature on the strain bandgap, the absorption and efficiency of the structure. It has been show...

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Bibliographic Details
Main Authors: Arbouz, Hayet, Aissat, Abdelkader, Bestam, Rachid, Vilcot, Jean Pierre
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Current density
Energy gaps (solid state)
Gallium
Lattices
materials
Modelling
Optimization
Photonic band gap
Photonic band gaps
Photovoltaic cells
semiconductor
solar cell
Solar cells
Strain
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Summary:This work deals with the modeling and optimization of the CuInGaSe/CdS based structure, for photovoltaics. In this study we took into consideration the effect of the concentration of the alloy and the temperature on the strain bandgap, the absorption and efficiency of the structure. It has been shown that the gallium concentration x varies the strain bandgap energy, these two parameters significantly changing the performance. For x = 30% and T = 300K, there is a bandgap energy equal to 1.15eV with a deformation of 0.4%. We have now found that the bandgap energy of structure absorbs the most of the incident photons. At this concentration the yield is around 22 % Then to achieve a reliable cell based on CuInGaSe/CdS it is sufficient to find a compromise between the alloy, the temperature and the strain.
ISSN:2380-7393
DOI:10.1109/IRSEC.2015.7455132