Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive...

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Bibliographic Details
Published in:IEEE journal of photovoltaics 2016-01, Vol.6 (1), p.17-27
Main Authors: Tomasi, Andrea, Sahli, Florent, Seif, Johannes Peter, Fanni, Lorenzo, de Nicolas Agut, Silvia Martin, Geissbuhler, Jonas, Paviet-Salomon, Bertrand, Nicolay, Sylvain, Barraud, Loris, Niesen, Bjoern, De Wolf, Stefaan, Ballif, Christophe
Format: Article
Language:English
Subjects:
Amorphous silicon
Charge carrier density
charge carrier lifetime
Charge carrier processes
Contact
Crystal structure
crystalline silicon
Heterojunctions
Indium tin oxide
Lighting
Oxides
passivating contacts
Passivation
Photovoltaic cells
Silicon
Solar cells
Stacks
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Summary:Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. Based on our findings, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2015.2484962