A ferroelectric memristor based on the migration of oxygen vacancies

• Published in: RSC advances 2016-01, Vol.6 (59), p.54113-54118
• Main Authors: Hou, Pengfei, Wang, Jinbin, Zhong, Xiangli, Wu, Yuexian
• Format: Article
• Language: English
• Subjects: Devices; Electric potential; Ferroelectric materials; Ferroelectricity; Memory devices; Oxygen; Switching; Voltage
• ISSN: 2046-2069; 2046-2069
• DOI: 10.1039/c6ra08257b

Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel storage, which is a breakthrough for further improving the density in the random access memory. However, the application of ferroelectric resistive switching memory is limited by the high operating voltage, the low switching ratio or slow write/read speed. Herein, we show a type of memristor with a thin ferroelectric film, the device can switch its resistance states by controlling the oxygen vacancy migration in the effect of an external electric field. The device still exhibits stable resistive switching phenomena after an endurance test of about 100 cycles and has high switch ratio about 10 8 % and good retention about 1.7 × 10 5 s. Furthermore, the device has the potential of being a multi-states memory with a low write voltage below 2 V and a fast write/read speed of about 5 μs. Our results suggest new opportunities for the development of high storage density nonvolatile memory. Ferroelectric resistive switching memory is a non-destructive and easy to achieve multilevel storage, which is a breakthrough for further improving the density in the random access memory.