Interface preservation during Ge-rich source/drain contact formation

Contact engineering of Ge-rich source/drain is of critical importance for the development of advanced nano-scale CMOS technology nodes. Germanosilicide or Germanide contacts with low Schottky barrier height are highly desirable to achieve low contact resistance for a Ge-rich source/drain. However, p...

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Main Authors: Niu, C., Raymond, M., Kamineni, V., Fronheiser, J., Siddiqui, S., Niimi, H., Dechene, J. M., Labonte, A., Adusumilli, P., Carr, A. V., Shearer, J., Demarest, J., Jiang, L., Li, J., Hengstebeck, R. W.
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
Contact
Drains
Electric contacts
Epitaxial growth
Germanides
Germanium oxides
Interface
Plasmas
Resists
Semiconductors
SiGe
Silicon
Silicon germanides
Silicon germanium
Strips
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Summary:Contact engineering of Ge-rich source/drain is of critical importance for the development of advanced nano-scale CMOS technology nodes. Germanosilicide or Germanide contacts with low Schottky barrier height are highly desirable to achieve low contact resistance for a Ge-rich source/drain. However, practical integration of Ge-rich SiGe into devices is complicated by its unique physical and chemical properties as compared to Si-rich epitaxial SiGe. We have observed significant erosion along the SiGe interface with its dielectric cap layer. The N2-H2 remote plasma resist strip process has been shown to trigger this erosion when GeO2 exists together with SiO2 at the interface. The integrity of Ge-rich SiGe contact interface can be preserved by replacing the N2-H2 remote plasma resist strip with an O2-based photoresist ash process. Cross-sectional STEM and EDX elemental analysis have confirmed Germanide and Germanosilicide formation at the Ge-rich SiGe contact interface.
ISSN:2376-6697
DOI:10.1109/ASMC.2016.7491158