Transient leakage of point-defects in gate oxide due to spatially transported constant-source of phosphorus contaminants

The transient leakage specifically within pMOS gate oxide has been for the first time connected to excessive phosphorus contaminants as a constant source of defects at gate oxidation. A 3D spatial analysis of defect transportation and formation was critical to the first-time success in design of exp...

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Bibliographic Details
Main Authors: Sheng, Lieyi, Williams, Brett, Haskett, Thomas, Glines, Eddie
Format: Conference Proceeding
Language:English
Subjects:
Contaminants
Defects
defects characterization
defects reproduction
failure spots
gate oxidation furnace
gate oxide defects
Gates
Iron
Leakage
Logic gates
Oxidation
Oxides
Phosphorus
phosphorus contaminants
Reliability
Semiconductors
spatial transportation
Transient analysis
transient leakage
Transportation
wafer pattern
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Summary:The transient leakage specifically within pMOS gate oxide has been for the first time connected to excessive phosphorus contaminants as a constant source of defects at gate oxidation. A 3D spatial analysis of defect transportation and formation was critical to the first-time success in design of experiment. By avoiding a significant build-up of phosphorus-contaminants inside the gate oxidation furnace, the pMOS-specific gate oxide defects due to the transient leakage have been eliminated, thus improving product yield and potentially enhancing gate oxide reliability.
ISSN:2376-6697
DOI:10.1109/ASMC.2016.7491164