Current conduction mechanisms through Au/SnO/n-type Si/In devices

Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property o...

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Bibliographic Details
Published in:Thin solid films 2016-07, Vol.611, p.1-5
Main Authors: Tsao, Hou-Yen, Wang, Yu-Wu
Format: Article
Language:English
Subjects:
Correlation
Devices
Dielectric constant
Emission
Interfacial properties
Permittivity
Silicon
Thin films
Online Access:Get full text
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Summary:Current conduction mechanisms through Au/SnO/n-type Si/In devices were investigated. The electrical characteristics suggest that the injection behavior is governed by Schottky (Poole-Frenkel) emission for gate (substrate) injection. This injection is strong correlated with the interfacial property of devices. The discrepancy of SnO permittivity extracted respectively from Schottky and Poole-Frenkel emissions is observed and owing to the formation of intermediate SnSixOy layer.
ISSN:0040-6090
DOI:10.1016/j.tsf.2016.05.002