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Realization and application of nanometer E-beam lithography system
The electron beam lithography system is a kind of important nanofabrication equipment with high resolution and excellent flexibility. In this paper, nanometer electron beam lithography (EBL) system based on scanning electron microscope is introduced. Its main components include a modified SEM, a las...
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creator | Shuhua, Wei Lan, Dai Jing, Zhang |
description | The electron beam lithography system is a kind of important nanofabrication equipment with high resolution and excellent flexibility. In this paper, nanometer electron beam lithography (EBL) system based on scanning electron microscope is introduced. Its main components include a modified SEM, a laser interferometer controlled stage, a versatile high speed pattern generator, and a fully functional and easy-operational software system. In order to explain this EBL system design principle, realization method, this paper mainly introduces each component's design basis, main structures and functions. Stitching experiments and overlay experiments have been done on this EBL system based on JSM-35CF SEM. The lithography results show that stitching and overlay error is less than 100 nm. This kind of EBL system based on SEM can meet the need of micro-nanofabrication research and design activities at flexibility and low price. |
doi_str_mv | 10.1109/INEC.2013.6465985 |
format | conference_proceeding |
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In this paper, nanometer electron beam lithography (EBL) system based on scanning electron microscope is introduced. Its main components include a modified SEM, a laser interferometer controlled stage, a versatile high speed pattern generator, and a fully functional and easy-operational software system. In order to explain this EBL system design principle, realization method, this paper mainly introduces each component's design basis, main structures and functions. Stitching experiments and overlay experiments have been done on this EBL system based on JSM-35CF SEM. The lithography results show that stitching and overlay error is less than 100 nm. 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In this paper, nanometer electron beam lithography (EBL) system based on scanning electron microscope is introduced. Its main components include a modified SEM, a laser interferometer controlled stage, a versatile high speed pattern generator, and a fully functional and easy-operational software system. In order to explain this EBL system design principle, realization method, this paper mainly introduces each component's design basis, main structures and functions. Stitching experiments and overlay experiments have been done on this EBL system based on JSM-35CF SEM. The lithography results show that stitching and overlay error is less than 100 nm. This kind of EBL system based on SEM can meet the need of micro-nanofabrication research and design activities at flexibility and low price.</description><subject>Design engineering</subject><subject>Electron Beam</subject><subject>Electron beam lithography</subject><subject>Electron beams</subject><subject>Fabrication</subject><subject>Flexibility</subject><subject>Generators</subject><subject>Interferometers</subject><subject>Layout</subject><subject>Lithography</subject><subject>Lithography System</subject><subject>Micro-nanofabrication</subject><subject>Nanoelectronics</subject><subject>Nanostructure</subject><subject>Overlay</subject><subject>Pattern Generator</subject><subject>Scanning electron microscopy</subject><subject>SEM</subject><subject>Software systems</subject><subject>Stitching</subject><issn>2159-3523</issn><issn>2159-3523</issn><isbn>1467348406</isbn><isbn>9781467348409</isbn><isbn>1467348422</isbn><isbn>9781467348423</isbn><isbn>1467348414</isbn><isbn>9781467348416</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpNUEtLw0AYXF9grf0B4iVHL6n7fhy1VC0UBdFz-JL9YlfyMpse6q9voAU9DcMMM8MQcsPonDHq7levy8WcUybmWmrlrDohV0xqI6SVnJ-SCWfKpUJxcfYnUH3-T7gksxi_KaVjoBZWTMjjO0IVfmEIbZNA4xPouioUB96WSQNNW-OAfbJMc4Q6qcKwab966Da7JO7igPU1uSihijg74pR8Pi0_Fi_p-u15tXhYp4FTO6SeUeu4pyW3iADSOQOFtMCtAV0WRo2T0HujjPeeO50ro4u8QFdCmedUiCm5O-R2ffuzxThkdYgFVhU02G5jxixXSo4derTeHqwBEbOuDzX0u-x4m9gDAR9dOg</recordid><startdate>201301</startdate><enddate>201301</enddate><creator>Shuhua, Wei</creator><creator>Lan, Dai</creator><creator>Jing, Zhang</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201301</creationdate><title>Realization and application of nanometer E-beam lithography system</title><author>Shuhua, Wei ; Lan, Dai ; Jing, Zhang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i208t-d10892d0f28eeaa4997ac48a287a6fc75106edd757ddd296b576cbce9fafbb033</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Design engineering</topic><topic>Electron Beam</topic><topic>Electron beam lithography</topic><topic>Electron beams</topic><topic>Fabrication</topic><topic>Flexibility</topic><topic>Generators</topic><topic>Interferometers</topic><topic>Layout</topic><topic>Lithography</topic><topic>Lithography System</topic><topic>Micro-nanofabrication</topic><topic>Nanoelectronics</topic><topic>Nanostructure</topic><topic>Overlay</topic><topic>Pattern Generator</topic><topic>Scanning electron microscopy</topic><topic>SEM</topic><topic>Software systems</topic><topic>Stitching</topic><toplevel>online_resources</toplevel><creatorcontrib>Shuhua, Wei</creatorcontrib><creatorcontrib>Lan, Dai</creatorcontrib><creatorcontrib>Jing, Zhang</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shuhua, Wei</au><au>Lan, Dai</au><au>Jing, Zhang</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Realization and application of nanometer E-beam lithography system</atitle><btitle>2013 IEEE 5th International Nanoelectronics Conference (INEC)</btitle><stitle>INEC</stitle><date>2013-01</date><risdate>2013</risdate><spage>164</spage><epage>167</epage><pages>164-167</pages><issn>2159-3523</issn><eissn>2159-3523</eissn><isbn>1467348406</isbn><isbn>9781467348409</isbn><eisbn>1467348422</eisbn><eisbn>9781467348423</eisbn><eisbn>1467348414</eisbn><eisbn>9781467348416</eisbn><abstract>The electron beam lithography system is a kind of important nanofabrication equipment with high resolution and excellent flexibility. In this paper, nanometer electron beam lithography (EBL) system based on scanning electron microscope is introduced. Its main components include a modified SEM, a laser interferometer controlled stage, a versatile high speed pattern generator, and a fully functional and easy-operational software system. In order to explain this EBL system design principle, realization method, this paper mainly introduces each component's design basis, main structures and functions. Stitching experiments and overlay experiments have been done on this EBL system based on JSM-35CF SEM. The lithography results show that stitching and overlay error is less than 100 nm. This kind of EBL system based on SEM can meet the need of micro-nanofabrication research and design activities at flexibility and low price.</abstract><pub>IEEE</pub><doi>10.1109/INEC.2013.6465985</doi><tpages>4</tpages></addata></record> |
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source | IEEE Xplore All Conference Series |
subjects | Design engineering Electron Beam Electron beam lithography Electron beams Fabrication Flexibility Generators Interferometers Layout Lithography Lithography System Micro-nanofabrication Nanoelectronics Nanostructure Overlay Pattern Generator Scanning electron microscopy SEM Software systems Stitching |
title | Realization and application of nanometer E-beam lithography system |
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