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Realization and application of nanometer E-beam lithography system

The electron beam lithography system is a kind of important nanofabrication equipment with high resolution and excellent flexibility. In this paper, nanometer electron beam lithography (EBL) system based on scanning electron microscope is introduced. Its main components include a modified SEM, a las...

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Main Authors: Shuhua, Wei, Lan, Dai, Jing, Zhang
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description The electron beam lithography system is a kind of important nanofabrication equipment with high resolution and excellent flexibility. In this paper, nanometer electron beam lithography (EBL) system based on scanning electron microscope is introduced. Its main components include a modified SEM, a laser interferometer controlled stage, a versatile high speed pattern generator, and a fully functional and easy-operational software system. In order to explain this EBL system design principle, realization method, this paper mainly introduces each component's design basis, main structures and functions. Stitching experiments and overlay experiments have been done on this EBL system based on JSM-35CF SEM. The lithography results show that stitching and overlay error is less than 100 nm. This kind of EBL system based on SEM can meet the need of micro-nanofabrication research and design activities at flexibility and low price.
doi_str_mv 10.1109/INEC.2013.6465985
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identifier ISSN: 2159-3523
ispartof 2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013, p.164-167
issn 2159-3523
2159-3523
language eng
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source IEEE Xplore All Conference Series
subjects Design engineering
Electron Beam
Electron beam lithography
Electron beams
Fabrication
Flexibility
Generators
Interferometers
Layout
Lithography
Lithography System
Micro-nanofabrication
Nanoelectronics
Nanostructure
Overlay
Pattern Generator
Scanning electron microscopy
SEM
Software systems
Stitching
title Realization and application of nanometer E-beam lithography system
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