The side effects on N-Type FinFET Devices

Fin-FET is so expected because it protects I off current from outrageously leaky as the channel length gets shorten continuously. It thus keeps the threshold voltage and the swing from rolling-up. Those good characteristics are manifested by the fully depleted region and the lack of leaky body as th...

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Bibliographic Details
Main Authors: Yang, Hsin-Chia, Du, Chong-Kuan, Liao, Wen-Shiang, Jhang, Jing-Zong, Lee, Yi-Hong, Chen, Tsao-Yeh, Liao, Ko-Fan, Wang, Mu-Chun, Chi, Sungching, Wang, Shea-Jue
Format: Conference Proceeding
Language:English
Subjects:
3-D Fin Structure
Channels
Conferences
Correlation
Depletion
FinFET Devices
FinFETs
Gates
Implants
Leakage current
Logic gates
Nanoelectronics
Over Etching
Over Exposure
Reliability
Side effects
Silicon on insulator technology
Swing
Threshold voltage
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Summary:Fin-FET is so expected because it protects I off current from outrageously leaky as the channel length gets shorten continuously. It thus keeps the threshold voltage and the swing from rolling-up. Those good characteristics are manifested by the fully depleted region and the lack of leaky body as the gate is biased. In this study, the fin-thickness effect is to be noticeably discussed. The correlated swings are to be determined and compared between the two kinds. The P-well Vt adjustment at two different energies, 10KeV and 6KeV, are also put into split.
ISSN:2159-3523
2159-3523
DOI:10.1109/INEC.2013.6466084