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Piezoelectric properties of CH3NH3PbI3 perovskite thin films and their applications in piezoelectric generators

CH3NH3PbI3 (MAPbI3) perovskite thin films were applied to fluorine-doped SnO2 (FTO)/glass and Au/Ti/polyethylene terephthalate (PET) substrates via a two-step process, which involved depositing a CH3NH3I (MAI) solution onto PbI2 films via spin-coating followed by crystallization at temperatures of 1...

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Published in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2016-01, Vol.4 (3), p.756-763
Main Authors: Kim, Yun-Jeong, Dang, Tran-Van, Choi, Hyung-Jin, Park, Byeong-Ju, Eom, Ji-Ho, Song, Hyun-A, Seol, Daehee, Kim, Yunseok, Shin, Sung-Ho, Nah, Junghyo, Yoon, Soon-Gil
Format: Article
Language:English
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Summary:CH3NH3PbI3 (MAPbI3) perovskite thin films were applied to fluorine-doped SnO2 (FTO)/glass and Au/Ti/polyethylene terephthalate (PET) substrates via a two-step process, which involved depositing a CH3NH3I (MAI) solution onto PbI2 films via spin-coating followed by crystallization at temperatures of 100 degree C. The 500 nm-thick crystallized MAPbI3 perovskite thin films showed a Curie temperature of similar to 328 K, a dielectric permittivity of similar to 52, a dielectric loss of similar to 0.02 at 1 MHz, and a low leakage current density of similar to 10-7 A cm-2 at plus or minus 3 V. The polarization-electric field (P-E) hysteresis loop and piezoresponse force microscopy (PFM) results showed that the films had well-developed ferroelectric properties and switchable polarization. Poling at an electrical field of 80 kV cm-1 enhanced the power density of the generator. The values for output voltage and current density of the poled films reached 2.7 V and 140 nA cm-2, respectively, which were 2.7-fold higher than those of the non-poled samples.
ISSN:2050-7488
2050-7496
DOI:10.1039/c5ta09662f