High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

High‐performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduc...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-10, Vol.28 (37), p.8302-8308
Main Authors: Wang, Jingli, Yao, Qian, Huang, Chun-Wei, Zou, Xuming, Liao, Lei, Chen, Shanshan, Fan, Zhiyong, Zhang, Kai, Wu, Wei, Xiao, Xiangheng, Jiang, Changzhong, Wu, Wen-Wei
Format: Article
Language:English
Subjects:
contact resistance
hexagonal boron nitride
MoS2
tunneling
Online Access:Get full text
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Summary:High‐performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201602757