High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

High‐performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduc...

Full description

Saved in:
Bibliographic Details
Published in:Advanced materials (Weinheim) 2016-10, Vol.28 (37), p.8302-8308
Main Authors: Wang, Jingli, Yao, Qian, Huang, Chun-Wei, Zou, Xuming, Liao, Lei, Chen, Shanshan, Fan, Zhiyong, Zhang, Kai, Wu, Wei, Xiao, Xiangheng, Jiang, Changzhong, Wu, Wen-Wei
Format: Article
Language:English
Subjects:
contact resistance
hexagonal boron nitride
MoS2
tunneling
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 8308
container_issue 37
container_start_page 8302
container_title Advanced materials (Weinheim)
container_volume 28
creator Wang, Jingli
Yao, Qian
Huang, Chun-Wei
Zou, Xuming
Liao, Lei
Chen, Shanshan
Fan, Zhiyong
Zhang, Kai
Wu, Wei
Xiao, Xiangheng
Jiang, Changzhong
Wu, Wen-Wei
description High‐performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.
doi_str_mv 10.1002/adma.201602757
format article
fullrecord <record><control><sourceid>proquest_wiley</sourceid><recordid>TN_cdi_proquest_miscellaneous_1826719357</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1826719357</sourcerecordid><originalsourceid>FETCH-LOGICAL-i2767-5833803b9ad555a438637b2fc310142ef56568c67a7d8b59651a89b12c27b2da3</originalsourceid><addsrcrecordid>eNo9kE1PAjEQQBujiYhePffoZbEftN09IiiYAB7AmHhpZpfiVpYttiW4_94lGE4zk7w3h4fQPSU9Sgh7hNUWeoxQSZgS6gJ1qGA06ZNMXKIOybhIMtlPr9FNCN-EkEwS2UFuYr9KPHO5rWxs2mXB8NJDHWyIzuODjSWeugNeFKWLcdPgJ_DeGo-Hro5QRJw3-D3Y-gsPotvaAi9LW2xwmTzNMQQMeLmva1MdgSk0xt-iqzVUwdz9zy56f3leDifJ9G38OhxME8uUVIlIOU8JzzNYCSGgz1PJVc7WBaeE9plZCylkWkgFapXmIpOCQprllBWsxVbAu-jh9Hfn3c_ehKi3NhSmqqA2bh80TZlUtI2iWjQ7oQdbmUbvvN2CbzQl-phVH7Pqc1Y9GM0G56t1k5Pb5jK_Zxf8RkvFldAf87EW_JONZqNPTfgfq4h7vg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1826719357</pqid></control><display><type>article</type><title>High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer</title><source>Wiley</source><creator>Wang, Jingli ; Yao, Qian ; Huang, Chun-Wei ; Zou, Xuming ; Liao, Lei ; Chen, Shanshan ; Fan, Zhiyong ; Zhang, Kai ; Wu, Wei ; Xiao, Xiangheng ; Jiang, Changzhong ; Wu, Wen-Wei</creator><creatorcontrib>Wang, Jingli ; Yao, Qian ; Huang, Chun-Wei ; Zou, Xuming ; Liao, Lei ; Chen, Shanshan ; Fan, Zhiyong ; Zhang, Kai ; Wu, Wei ; Xiao, Xiangheng ; Jiang, Changzhong ; Wu, Wen-Wei</creatorcontrib><description>High‐performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.201602757</identifier><language>eng</language><publisher>Blackwell Publishing Ltd</publisher><subject>contact resistance ; hexagonal boron nitride ; MoS2 ; tunneling</subject><ispartof>Advanced materials (Weinheim), 2016-10, Vol.28 (37), p.8302-8308</ispartof><rights>2016 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Wang, Jingli</creatorcontrib><creatorcontrib>Yao, Qian</creatorcontrib><creatorcontrib>Huang, Chun-Wei</creatorcontrib><creatorcontrib>Zou, Xuming</creatorcontrib><creatorcontrib>Liao, Lei</creatorcontrib><creatorcontrib>Chen, Shanshan</creatorcontrib><creatorcontrib>Fan, Zhiyong</creatorcontrib><creatorcontrib>Zhang, Kai</creatorcontrib><creatorcontrib>Wu, Wei</creatorcontrib><creatorcontrib>Xiao, Xiangheng</creatorcontrib><creatorcontrib>Jiang, Changzhong</creatorcontrib><creatorcontrib>Wu, Wen-Wei</creatorcontrib><title>High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer</title><title>Advanced materials (Weinheim)</title><addtitle>Adv. Mater</addtitle><description>High‐performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.</description><subject>contact resistance</subject><subject>hexagonal boron nitride</subject><subject>MoS2</subject><subject>tunneling</subject><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNo9kE1PAjEQQBujiYhePffoZbEftN09IiiYAB7AmHhpZpfiVpYttiW4_94lGE4zk7w3h4fQPSU9Sgh7hNUWeoxQSZgS6gJ1qGA06ZNMXKIOybhIMtlPr9FNCN-EkEwS2UFuYr9KPHO5rWxs2mXB8NJDHWyIzuODjSWeugNeFKWLcdPgJ_DeGo-Hro5QRJw3-D3Y-gsPotvaAi9LW2xwmTzNMQQMeLmva1MdgSk0xt-iqzVUwdz9zy56f3leDifJ9G38OhxME8uUVIlIOU8JzzNYCSGgz1PJVc7WBaeE9plZCylkWkgFapXmIpOCQprllBWsxVbAu-jh9Hfn3c_ehKi3NhSmqqA2bh80TZlUtI2iWjQ7oQdbmUbvvN2CbzQl-phVH7Pqc1Y9GM0G56t1k5Pb5jK_Zxf8RkvFldAf87EW_JONZqNPTfgfq4h7vg</recordid><startdate>20161005</startdate><enddate>20161005</enddate><creator>Wang, Jingli</creator><creator>Yao, Qian</creator><creator>Huang, Chun-Wei</creator><creator>Zou, Xuming</creator><creator>Liao, Lei</creator><creator>Chen, Shanshan</creator><creator>Fan, Zhiyong</creator><creator>Zhang, Kai</creator><creator>Wu, Wei</creator><creator>Xiao, Xiangheng</creator><creator>Jiang, Changzhong</creator><creator>Wu, Wen-Wei</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>7X8</scope></search><sort><creationdate>20161005</creationdate><title>High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer</title><author>Wang, Jingli ; Yao, Qian ; Huang, Chun-Wei ; Zou, Xuming ; Liao, Lei ; Chen, Shanshan ; Fan, Zhiyong ; Zhang, Kai ; Wu, Wei ; Xiao, Xiangheng ; Jiang, Changzhong ; Wu, Wen-Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2767-5833803b9ad555a438637b2fc310142ef56568c67a7d8b59651a89b12c27b2da3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>contact resistance</topic><topic>hexagonal boron nitride</topic><topic>MoS2</topic><topic>tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Jingli</creatorcontrib><creatorcontrib>Yao, Qian</creatorcontrib><creatorcontrib>Huang, Chun-Wei</creatorcontrib><creatorcontrib>Zou, Xuming</creatorcontrib><creatorcontrib>Liao, Lei</creatorcontrib><creatorcontrib>Chen, Shanshan</creatorcontrib><creatorcontrib>Fan, Zhiyong</creatorcontrib><creatorcontrib>Zhang, Kai</creatorcontrib><creatorcontrib>Wu, Wei</creatorcontrib><creatorcontrib>Xiao, Xiangheng</creatorcontrib><creatorcontrib>Jiang, Changzhong</creatorcontrib><creatorcontrib>Wu, Wen-Wei</creatorcontrib><collection>Istex</collection><collection>MEDLINE - Academic</collection><jtitle>Advanced materials (Weinheim)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Jingli</au><au>Yao, Qian</au><au>Huang, Chun-Wei</au><au>Zou, Xuming</au><au>Liao, Lei</au><au>Chen, Shanshan</au><au>Fan, Zhiyong</au><au>Zhang, Kai</au><au>Wu, Wei</au><au>Xiao, Xiangheng</au><au>Jiang, Changzhong</au><au>Wu, Wen-Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer</atitle><jtitle>Advanced materials (Weinheim)</jtitle><addtitle>Adv. Mater</addtitle><date>2016-10-05</date><risdate>2016</risdate><volume>28</volume><issue>37</issue><spage>8302</spage><epage>8308</epage><pages>8302-8308</pages><issn>0935-9648</issn><eissn>1521-4095</eissn><abstract>High‐performance MoS2 transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.</abstract><pub>Blackwell Publishing Ltd</pub><doi>10.1002/adma.201602757</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0935-9648
ispartof Advanced materials (Weinheim), 2016-10, Vol.28 (37), p.8302-8308
issn 0935-9648
1521-4095
language eng
recordid cdi_proquest_miscellaneous_1826719357
source Wiley
subjects contact resistance
hexagonal boron nitride
MoS2
tunneling
title High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T04%3A16%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_wiley&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20Mobility%20MoS2%20Transistor%20with%20Low%20Schottky%20Barrier%20Contact%20by%20Using%20Atomic%20Thick%20h-BN%20as%20a%20Tunneling%20Layer&rft.jtitle=Advanced%20materials%20(Weinheim)&rft.au=Wang,%20Jingli&rft.date=2016-10-05&rft.volume=28&rft.issue=37&rft.spage=8302&rft.epage=8308&rft.pages=8302-8308&rft.issn=0935-9648&rft.eissn=1521-4095&rft_id=info:doi/10.1002/adma.201602757&rft_dat=%3Cproquest_wiley%3E1826719357%3C/proquest_wiley%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i2767-5833803b9ad555a438637b2fc310142ef56568c67a7d8b59651a89b12c27b2da3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1826719357&rft_id=info:pmid/&rfr_iscdi=true