Practical Determination of Individual Element Resistive States in Selectorless RRAM Arrays

Three distinct methods of reading multi-level cross-point resistive states from selector-less RRAM arrays are implemented in a physical system and compared for read-out accuracy. They are: the standard, direct measurement method and two methods that attempt to enhance accuracy by computing cross-poi...

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Bibliographic Details
Published in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2016-06, Vol.63 (6), p.827-835
Main Authors: Serb, Alexander, Redman-White, William, Papavassiliou, Christos, Prodromakis, Themistoklis
Format: Article
Language:English
Subjects:
Accuracy
Analogue circuits
Arrays
Circuits
Control systems
crossbar
Current measurement
device characterization
Electrical resistance measurement
Instruments
Measurement methods
measurement technique
memory
Resilience
Resistance
RRAM
SPICE
Strategy
Voltage measurement
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Summary:Three distinct methods of reading multi-level cross-point resistive states from selector-less RRAM arrays are implemented in a physical system and compared for read-out accuracy. They are: the standard, direct measurement method and two methods that attempt to enhance accuracy by computing cross-point resistance on the basis of multiple measurements. Results indicate that the standard method performs as well as or better than its competitors. SPICE simulations are then performed with controlled amounts of non-idealities introduced in the system in order to test whether any technique offers particular resilience against typical practical imperfections such as crossbar line resistance. We conclude that even though certain non-idealities are shown to be minimized by different circuit-level read-out strategies, line resistance within the crossbar remains an outstanding challenge.
ISSN:1549-8328
1558-0806
DOI:10.1109/TCSI.2015.2476296