A room temperature light source based on silicon nanowires

• Published in: Thin solid films 2016-08, Vol.613, p.59-63
• Main Authors: Lo Faro, M.J., D'Andrea, C., Messina, E., Fazio, B., Musumeci, P., Franzò, G., Gucciardi, P.G., Vasi, C., Priolo, F., Iacona, F., Irrera, A.
• Format: Article
• Language: English
• Subjects: Bright tempering; Carbon nanotubes; Emission; Metal assisted chemical etching; Multiwavelength light source; Nanowires; Precursors; Room temperature photoluminescence; Silicon; Silicon nanowires; Single wall carbon nanotubes; Thin films
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2015.11.028

We synthesized ultrathin Si nanowires (NWs) by metal assisted chemical wet etching, using a very thin discontinuous Au layer as precursor for the process. A bright room temperature emission in the visible range due to electron–hole recombination in quantum confined Si NWs is reported. A single walled carbon nanotube (CNT) suspension was prepared and dispersed in Si NW samples. The hybrid Si NW/CNT system exhibits a double emission at room temperature, both in the visible (due to Si NWs) and the IR (due to CNTs) range, thus demonstrating the realization of a low-cost material with promising perspectives for applications in Si-based photonics. •Synthesis of ultrathin Si nanowires (NWs) by metal-assisted chemical etching•Synthesis of NW/carbon nanotube (CNT) hybrid systems•Structural characterization of Si NWs and Si NW/CNT•Room temperature photoluminescence (PL) properties of Si NWs and of Si NW/CNT•Tuning of the PL properties of the Si NW/CNT hybrid system