Barrier layer dependence of self-annealing effect in directly electroplated copper films

This work investigated the self-annealing effect of Cu directly electrodeposited on CoMo based barriers with different atomic ratios of Co to Mo. Cu electroplated on barrier with higher Co content expressed lower resistivity and resistance drop as well as higher texture coefficient of Cu (111). Comp...

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Bibliographic Details
Main Authors: Wang, Xu, Yang, Guang, Cao, Li-Ao, Qu, Xin-Ping
Format: Conference Proceeding
Language:English
Subjects:
Annealing
ANNEALING PROCESSES
Barriers
Coefficients
CoMo barrier
Conductivity
Conferences
Copper
direct electroplating
ELECTRICAL CONDUCTIVITY
Electrical resistivity
ELECTRODEPOSITION
ELECTROPLATING
Resistance
Seeds
self-annealing
single-layer barrier
Stress
Substrates
Surface layer
Texture
TEXTURES
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Summary:This work investigated the self-annealing effect of Cu directly electrodeposited on CoMo based barriers with different atomic ratios of Co to Mo. Cu electroplated on barrier with higher Co content expressed lower resistivity and resistance drop as well as higher texture coefficient of Cu (111). Comparisons are made between Cu electroplated directly on barriers and Cu on Cu seed. The resistivity of Cu electroplated on Co is close to that of Cu plated on Cu seed layer. Results show that with higher texture coefficient of (111) the Cu films will have lower resistance change during self-annealing.
ISSN:2380-6338
DOI:10.1109/IITC-AMC.2016.7507727