Ordered porosity for interconnect applications

To lower interconnect signal delay, the industry continues to work on the integration of low-k interlayer dielectrics (ILD). Porosity is often added to further reduce dielectric constant and significantly impact capacitance. These porous dielectric films are most commonly deposited via Chemical Vapo...

Full description

Saved in:
Bibliographic Details
Main Authors: Torres, Jessica M., Bielefeld, Jeff, Blackwell, James, Michalak, David J., Clarke, James S.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
Chemical vapor deposition
Chemistry
Conferences
Delays
Dielectrics
Geometry
Interconnections
Interlayers
Low-k dielectrics
Mechanical factors
Mechanical properties
ordered porosity
Organosilica
Pore size
Porosity
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:To lower interconnect signal delay, the industry continues to work on the integration of low-k interlayer dielectrics (ILD). Porosity is often added to further reduce dielectric constant and significantly impact capacitance. These porous dielectric films are most commonly deposited via Chemical Vapor Deposition (CVD), delivering a random order to the pore structure. Disordered films suffer from a reduction in mechanical properties, which ultimately limits the maximum porosity obtained due to film collapse. Control of porosity, pore size distribution and pore geometry is needed to extend the porosity beyond conventional percolation thresholds. Here we present the case study of a periodic mesoporous organosilica (PMO) film. We optimize solution processing to obtain an ordered film and characterize the film porosity, pore size distribution, geometry and mechanical properties. The PMO film is tested in both a dual damascene and replacement back end integration flow.
ISSN:2380-6338
DOI:10.1109/IITC-AMC.2016.7507644