Low-temperature grown indium oxide nanowire-based antireflection coatings for multi-crystalline silicon solar cells

Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi‐crystalline silicon (mc‐Si) solar cells has been investigated. The low‐temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O2–Ar system using indium nanocrystals as s...

Full description

Saved in:
Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2016-08, Vol.213 (8), p.2259-2263
Main Authors: Wang, Yu-Cian, Chen, Chih-Yao, Kuo, Cheng-Wen, Kuan, Ta-Ming, Yu, Cheng-Yeh, Chen, I-Chen
Format: Article
Language:English
Subjects:
antireflection
Antireflection coatings
Deterioration
Indium
indium oxide
Indium oxides
Nanowires
Photovoltaic cells
plasma-assisted growth
Silicon
Silicon wafers
Solar cells
Temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Light harvesting by indium oxide nanowires (InO NWs) as an antireflection layer on multi‐crystalline silicon (mc‐Si) solar cells has been investigated. The low‐temperature growth of InO NWs was performed in electron cyclotron resonance (ECR) plasma with an O2–Ar system using indium nanocrystals as seed particles via the self‐catalyzed growth mechanism. The size‐dependence of antireflection properties of InO NWs was studied. A considerable enhancement in short‐circuit current (from 35.39 to 38.33 mA cm−2) without deterioration of other performance parameters is observed for mc‐Si solar cells coated with InO NWs.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201600005