Modeling a mim capacitor including series resistance and inductance for characterizing nanometer high-K dielectric films

ABSTRACT A model to represent the parasitic series resistance and inductance inherent to the capacitor plates is proposed. The model is used to determine the frequency‐dependent permittivity and loss tangent of high‐k dielectrics (HfO2 and Al2O3) in metal‐insulator‐metal capacitors. Experimental res...

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Bibliographic Details
Published in:Microwave and optical technology letters 2016-11, Vol.58 (11), p.2599-2602
Main Authors: Cortés-Hernández, Diego M., Valderrama-B, René, Torres-Torres, Reydezel, Molina, Joel
Format: Article
Language:English
Subjects:
Aluminum oxide
Capacitors
Dielectric constant
Dielectrics
Hafnium oxide
Inductance
loss tangent
Microwaves
MIM capacitor
Permittivity
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Summary:ABSTRACT A model to represent the parasitic series resistance and inductance inherent to the capacitor plates is proposed. The model is used to determine the frequency‐dependent permittivity and loss tangent of high‐k dielectrics (HfO2 and Al2O3) in metal‐insulator‐metal capacitors. Experimental results are in agreement with nominal values reported in the literature. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:2599–2602, 2016
ISSN:0895-2477
1098-2760
DOI:10.1002/mop.30103