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Impact of surface recombination on efficiency of III-nitride light-emitting diodes
The paper considers surface recombination at the free active region surface as the mechanism of carrier losses which has not yet been discussed with regard to III‐nitride LEDs despite of its evident importance for AlGaInP‐based light emitters. Using advanced thin‐film and triangular volumetric chip...
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Published in: | Physica status solidi. PSS-RRL. Rapid research letters 2016-06, Vol.10 (6), p.480-484 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The paper considers surface recombination at the free active region surface as the mechanism of carrier losses which has not yet been discussed with regard to III‐nitride LEDs despite of its evident importance for AlGaInP‐based light emitters. Using advanced thin‐film and triangular volumetric chip designs reported in literature as prototypes, we have demonstrated by simulation a noticeable impact of surface recombination on the wall‐plug efficiency of InGaN‐based LEDs. Various types of LEDs whose efficiency may be especially affected by surface recombination are discussed. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)
This Letter demonstrates that surface recombination at the periphery of the active region is an important mechanism of carrier losses, which has not yet been regarded as a factor capable of limiting the efficiency of InGaN‐based LEDs. The impact of non‐equilibrium carrier diffusivity and lifetime on the recombination losses is discussed in terms of simulations. |
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ISSN: | 1862-6254 1862-6270 |
DOI: | 10.1002/pssr.201600059 |