Direct growth of graphene film on piezoelectric La sub(3)Ga sub(5.5)Ta sub( 0.5)O sub(14) crystal

• Published in: Physica status solidi. PSS-RRL. Rapid research letters 2016-08, Vol.10 (8), p.639-644
• Main Authors: Brzhezinskaya, Maria, Irzhak, Artemii, Irzhak, Dmitry, Kang, Tae Won, Kononenko, Oleg, Matveev, Viktor, Panin, Gennady, Roshchupkin, Dmitry
• Format: Article
• Language: English
• Subjects: Chemical bonds; Chemical vapor deposition; Crystals; Graphene; Piezoelectric crystals; Piezoelectricity; Raman spectroscopy; Substrates
• ISSN: 1862-6254; 1862-6270
• DOI: 10.1002/pssr.201600122

For the first time, a few layer graphene was grown on the surface of the polar X -cut (110) of a piezoelectric La sub(3)Ga sub(5.5)Ta sub( 0.5)O sub(14) crystal by the CVD method. This polar X -cut is characterized by a good matching of the crystal lattice parameters of La sub(3)Ga sub(5.5)Ta sub( 0.5)O sub(14) and two-dimensional graphene crystal, as well as the presence of piezoelectric fields on the surface of the substrate, which could affect the graphene growth process. Raman spectroscopy investigation has shown the ability for direct growth of graphene on the piezoelectric crystal. The NEXAFS spectroscopy studies of the film grown on the surface of the X -cut of an La sub(3)Ga5 sub(.5)Ta sub( 0.5)O sub(14) crystal also confirmed that the grown film is graphene. Moreover, the NEXAFS spectra enable the conclusion that additional electron states are formed as a result of chemical bonding between the atoms of graphene and the substrate which proceeds through hybridization of the valence electron states of the substrate and graphene atoms. ( copyright 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) Few layer graphene was grown on the surface of the polar X-cut (110) of a piezoelectric La sub(3)Ga sub(5.5)Ta sub( 0.5)O sub(14) crystal by the chemical vapor deposition (CVD) method. Raman spectroscopy investigation has shown the ability for direct growth of few layer graphene on the piezoelectric crystal.